Scalable integrated circuit high density capacitors

ABSTRACT

The present invention provides several scalable integrated circuit high density capacitors and their layout techniques. The capacitors are scaled, for example, by varying the number of metal layers and/or the area of the metal layers used to form the capacitors. The capacitors use different metallization patterns to form the metal layers, and different via patterns to couple adjacent metal layers. In embodiments, optional shields are included as the top-most and/or bottom-most layers of the capacitors, and/or as side shields, to reduce unwanted parasitic capacitance.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.11/013,789, filed on Dec. 17, 2004, which claims the benefit of U.S.Provisional Patent Application No. 60/530,648, filed Dec. 19, 2003, bothof which are incorporated herein by reference in their entirety.

FIELD OF THE INVENTION

The present invention relates to capacitors. More particularly, itrelates to integrated circuit capacitors.

BACKGROUND OF THE INVENTION

Advances in semiconductor manufacturing technology have led to theintegration of millions of circuit elements on a single integratedcircuit. In order to integrate these increasing numbers of circuitelements onto an integrated circuit, it has been necessary to reduce thedimensions of the various component parts, including capacitors, whichare basic building blocks for electrical circuits. Therefore, a needexists for new capacitors that improve area utilization and/orintegrated circuit performance.

BRIEF SUMMARY OF THE INVENTION

The present invention provides several scalable integrated circuit highdensity capacitors and their layout techniques. The capacitors arescalable in that they can be formed using a selected number of metallayers and the area of these metal layers is variable.

It is a feature of the present invention that optional shields can beincluded as the top-most and/or bottom-most layers of the capacitors, aswell as one or more sides of the capacitors, to reduce unwantedparasitic capacitance.

Further embodiments, features, and advantages of the present invention,as well as the structure and operation of the various embodiments of thepresent invention, are described in detail below with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a schematic diagram depicting a top view of an example metallayer of a scalable integrated circuit stagger-structure high densitycapacitor according to an embodiment of the present invention.

FIG. 1B is a schematic diagram depicting a cross sectional view (A-A) ofthe scalable integrated circuit stagger-structure high density capacitorof FIG. 1A.

FIG. 1C is a schematic diagram depicting a top view of an example vialayer of the scalable integrated circuit stagger-structure high densitycapacitor of FIG. 1A.

FIG. 1D is a schematic diagram depicting optional side shields for thescalable integrated circuit stagger-structure high density capacitor ofFIG. 1A.

FIG. 2A is a schematic diagram depicting a top view of an example metallayer of a scalable integrated circuit cross-structure high densitycapacitor according to an embodiment of the present invention.

FIG. 2B is a schematic diagram depicting a cross sectional view (A-A) ofthe scalable integrated circuit cross-structure high density capacitorof FIG. 2A.

FIG. 2C is a schematic diagram depicting a cross sectional view (B-B) ofthe scalable integrated circuit cross-structure high density capacitorof FIG. 2A.

FIG. 2D is a schematic diagram depicting a top view of an example vialayer of the scalable integrated circuit cross-structure high densitycapacitor of FIG. 2A.

FIG. 3A is a schematic diagram depicting a top view of an example metallayer of a scalable integrated circuit loop-structure high densitycapacitor according to an embodiment of the present invention.

FIG. 3B is a schematic diagram depicting a cross sectional view (A-A) ofthe scalable integrated circuit loop-structure high density capacitor ofFIG. 3A.

FIG. 3C is a schematic diagram depicting a cross sectional view (B-B) ofthe scalable integrated circuit loop-structure high density capacitor ofFIG. 3A.

FIG. 3D is a schematic diagram depicting a top view of an example vialayer of the scalable integrated circuit loop-structure high densitycapacitor of FIG. 3A.

FIG. 4A is a schematic diagram depicting a top view of an example metallayer of a scalable integrated circuit weave-structure high densitycapacitor according to an embodiment of the present invention.

FIG. 4B is a schematic diagram depicting a cross sectional view (A-A) ofthe scalable integrated circuit weave-structure high density capacitorof FIG. 4A.

FIG. 4C is a schematic diagram depicting a cross sectional view (B-B) ofthe scalable integrated circuit weave-structure high density capacitorof FIG. 4A.

FIG. 4D is a schematic diagram depicting a cross sectional view (C-C) ofthe scalable integrated circuit weave-structure high density capacitorof FIG. 4A.

FIG. 4E is a schematic diagram depicting a top view of an example vialayer of the scalable integrated circuit weave-structure high densitycapacitor of FIG. 4A.

FIG. 5A is a schematic diagram depicting a top view of an example metallayer of a first scalable integrated circuit vertical-structure highdensity capacitor according to an embodiment of the present invention.

FIG. 5B is a schematic diagram depicting a cross sectional view (A-A) ofthe first scalable integrated circuit vertical-structure high densitycapacitor of FIG. 5A.

FIG. 5C is a schematic diagram depicting a top view of an example vialayer of the first scalable integrated circuit vertical-structure highdensity capacitor of FIG. 5A.

FIG. 6A is a schematic diagram depicting a top view of an example metallayer of a second scalable integrated circuit vertical-structure highdensity capacitor according to an embodiment of the present invention.

FIG. 6B is a schematic diagram depicting a cross sectional view (A-A) ofthe second scalable integrated circuit vertical-structure high densitycapacitor of FIG. 6A.

FIG. 6C is a schematic diagram depicting a top view of an example vialayer of the second scalable integrated circuit vertical-structure highdensity capacitor of FIG. 6A.

FIG. 7A is a schematic diagram depicting a top view of an example metallayer of a third scalable integrated circuit vertical-structure highdensity capacitor according to an embodiment of the present invention.

FIG. 7B is a schematic diagram depicting a cross sectional view (A-A) ofthe third scalable integrated circuit vertical-structure high densitycapacitor of FIG. 7A.

FIG. 7C is a schematic diagram depicting a top view of an example vialayer of the third scalable integrated circuit vertical-structure highdensity capacitor of FIG. 7A.

FIG. 8A is a schematic diagram depicting a top view of an example metallayer of a first scalable integrated circuit spiral-structure highdensity capacitor according to an embodiment of the present invention.

FIG. 8B is a schematic diagram depicting a cross sectional view (A-A) ofthe first scalable integrated circuit spiral-structure high densitycapacitor of FIG. 8A.

FIG. 8C is a schematic diagram depicting a top view of an example vialayer of the first scalable integrated circuit spiral-structure highdensity capacitor of FIG. 8A.

FIG. 9A is a schematic diagram depicting a top view of a first examplemetal layer of a second scalable integrated circuit spiral-structurehigh density capacitor according to an embodiment of the presentinvention.

FIG. 9B is a schematic diagram depicting a cross sectional view (A-A) ofthe second scalable integrated circuit spiral-structure high densitycapacitor of FIG. 9A.

FIG. 9C is a schematic diagram depicting a top view of a second examplemetal layer for the second scalable integrated circuit spiral-structurehigh density capacitor of FIG. 9A.

FIG. 9D is a schematic diagram depicting a top view of an example vialayer of the second scalable integrated circuit spiral-structure highdensity capacitor of FIG. 9A.

FIG. 10A is a schematic diagram depicting a top view of a first examplemetal layer of a third scalable integrated circuit spiral-structure highdensity capacitor according to an embodiment of the present invention.

FIG. 10B is a schematic diagram depicting a cross sectional view (A-A)of the third scalable integrated circuit spiral-structure high densitycapacitor of FIG. 10A.

FIG. 10C is a schematic diagram depicting a top view of a second examplemetal layer for the third scalable integrated circuit spiral-structurehigh density capacitor of FIG. 10A.

FIG. 10D is a schematic diagram depicting a top view of a first portionof an example via layer of the third scalable integrated circuitspiral-structure high density capacitor of FIG. 10A used to connect themetal layer of FIG. 10A to the metal layer of FIG. 10C.

FIG. 10E is a schematic diagram depicting a top view of a second portionof the example via layer used to connect the metal layer of FIG. 10A tothe metal layer of FIG. 10C.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention provides scalable integrated circuit high densitycapacitors and their layout techniques. The figures detail the capacitorstructures, graphically. In an embodiment of the present invention,optional shields designated as top-most and/or bottom-most layers of thecapacitor structure, and/or optional side shields, are connected tonodes other than the capacitor's terminals (i.e., A or B) to help reduceunwanted parasitic capacitance from terminals A and/or B to othercircuit nodes. In an embodiment, optional shields designated as top-mostand/or bottom-most layers of the capacitor structure, and/or optionalside shields, are connected to one of the capacitor's terminals (e.g.,A) to minimize parasitic capacitance from the other capacitor terminal(e.g., B) to other circuit nodes.

FIG. 1A is a schematic diagram depicting a top view of an example metallayer 100 of a scalable integrated circuit stagger-structure highdensity capacitor 150 (see FIG. 1B) according to an embodiment of thepresent invention. As shown in FIG. 1A, metal layer 100 includes twometallization patterns 102 and 104. Metallization pattern 102 has aplurality of finger tracks 106 coupled approximately perpendicular to abackbone track 108A. Similarly, metallization pattern 104 has aplurality of finger tracks 106 coupled approximately perpendicular to abackbone track 108B. The fingers 106 of metallization patterns 102 and104 are interlaced as shown in FIG. 1A. By approximately perpendicular,it is meant that the finger tracks 106 are sufficiently perpendicular sothat they can be interlaced. The metallization patterns 102 and 104 canbe formed using any conducting metal. In an embodiment, copper oraluminum is used to form metallization patterns 102 and 104, but theinvention is not limited to these metals.

FIG. 1B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 1A) of the scalable integrated circuit stagger-structure highdensity capacitor 150. As shown in FIG. 1B, capacitor 150 is scalable inthat it can be formed using a selected number of metal layers such as,for example, metal layer 100. Additionally, the area of these metallayers can be varied to meet design requirements. Accordingly, thenumber and area of the metal layers illustrated for capacitor 150, orany other capacitor described herein, is not to be used to limit theinvention. As shown in FIG. 1B, adjacent metal layers of capacitor 150are staggered. This staggering is illustrated by the offset of portion152 of metal layer F from portion 154 of metal layer E.

Although the width of finger tracks 106 are depicted as being equal insize to the spacing between the finger tracks, in some embodiments, thewidths of finger tracks 106 are selected to be larger than the spacingbetween the finger tracks so that finger tracks of adjacent metal layersoverlap. In other embodiments, the widths of finger tracks 106 areselected to be smaller than the spacing between the finger tracks sothat finger tracks of adjacent metal layers will not overlap.

Optional shields 156 and/or 158 can be included as the top-most and/orbottom-most layers of capacitor 150 to help reduce unwanted parasiticcapacitance. In an embodiment, the shields 156 and/or 158 are connectedto nodes other than the terminals (i.e., A and B shown in FIG. 1B) ofcapacitor 150. In another embodiment, shields 156 and/or 158, designatedas top-most and/or bottom-most layers of capacitor 150, are connected toone of the capacitor's terminals (e.g., A) to minimize parasiticcapacitance from the other capacitor terminal (e.g., B) to other circuitnodes. Any type of shield, including side shields (see FIG. 1D), can beused in accordance with the present invention. In embodiments, theshields 156 and 158 are formed, for example, using outer stripes of allconductive layers, metal plates, or any other known structure that canserve as a shield.

FIG. 1C is a schematic diagram depicting a top view of an example vialayer 180 of the scalable integrated circuit stagger-structure highdensity capacitor 150. Via layer 180 includes a plurality of vias 182used to couple adjacent metal layers of capacitor 150 such as, forexample, two metal layers having the metallization patterns shown inFIG. 1A. The vias 182 shown in FIG. 1C couple together backbone tracks108 of adjacent metal layers. The number and shape of the vias shown inFIG. 1C are only illustrative and not limiting. Via layers having moreor less vias than shown in FIG. 1C can be used as well as vias ofdifferent shapes and/or sizes.

FIG. 1D illustrates optional side shields 192 and 194 for high densitycapacitor 150. In the embodiment shown in FIG. 1D, side shields 192 and194 are formed using metal layers which have end finger tracks, such asend finger tracks 195 a and 195 b, that are associated with a particularterminal of capacitor 150 (.e.g., A). It is noted here, however, thatthis embodiment is only illustrative and not limiting. Any type of sideshields can be used. For example, in one embodiment, the width of theend finger tracks 195 are varied so that the finger tracks overlap,either partially or completely. In another embodiment, side tracks areformed using stacked vias rather than end finger tracks.

In embodiments of the present invention, the optional side shields areconnected to nodes other than the terminals (i.e., A and B) of capacitor150. In one embodiment, the shields are connected to one of thecapacitor's terminals (e.g., A as shown in FIG. 1D) to minimizeparasitic capacitance from the other capacitor terminal (e.g., B) toother circuit nodes.

FIG. 2A is a schematic diagram depicting a top view of an example metallayer 200 of a scalable integrated circuit cross-structure high densitycapacitor 220 (see FIG. 2B) according to an embodiment of the presentinvention. As shown in FIG. 2A, metal layer 200 includes twometallization patterns 202 and 204. Metallization pattern 202 has aplurality of finger tracks 206 coupled approximately perpendicular tobackbone track 208A. Metallization pattern 204 has a plurality of fingertracks 206 coupled approximately perpendicular to backbone track 208B.The finger tracks 206 of metallization patterns 202 and 204 areinterlaced as shown in FIG. 2A. As with capacitor 150, the metallizationpatterns 202 and 204 can be formed using any conducting metal. Forbrevity, it is noted here that the metallization patterns for each ofthe capacitors described herein can be formed using any conducting metalso that this feature need not be repeated below in the description ofother capacitor according to the present invention.

FIG. 2B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 2A) of the scalable integrated circuit cross-structure highdensity capacitor 220. As shown in FIG. 2B, capacitor 220 is scalable inthat it can be formed using a selected number of metal layers such as,for example, metal layer 200, and the area of these metal layers can bevaried, as is the case for each capacitor described herein. Optionalshields 222 and/or 224 can be included as the top-most and/orbottom-most layers of capacitor 220, as well as optional side shields(not shown), to help reduce unwanted parasitic capacitance. Any type ofshield can be used with capacitor 220 in accordance with the presentinvention, as with all the capacitors according to the presentinvention.

FIG. 2C is a schematic diagram depicting a cross sectional view (B-B)(see FIG. 2A) of the scalable integrated circuit cross-structure highdensity capacitor 220. FIG. 2B and FIG. 2C illustrate the relationshipof the metal layers that make up capacitor 220. These figures alsoillustrate how the metal layers of capacitor 220 are coupled together byvias. The A's and B's shown in FIG. 2B and FIG. 2C depict whether a partis associated with a terminal A or a terminal B of capacitor 220.

FIG. 2D is a schematic diagram depicting a top view of an example vialayer 240 of the scalable integrated circuit cross-structure highdensity capacitor 220. As shown in FIG. 2D, in an embodiment, both thefinger tracks 206 and the backbone tracks 208 of selected metal layersare coupled together by vias 242.

FIG. 3A is a schematic diagram depicting a top view of an example metallayer 300 of a scalable integrated circuit loop-structure high densitycapacitor 320 (see FIG. 3B) according to an embodiment of the presentinvention. As shown in FIG. 3A, metal layer 300 includes a metallizationpattern 302 and a plurality of metallization patterns 304. Themetallization pattern 302 has loop openings 306 in which themetallization patterns 304 are located. One metallization pattern 304 islocated in each loop opening 306 of metallization pattern 302. Theshapes of the metallization patterns and loop openings shown in FIG. 3Aare illustrative only. Other shapes and/or sizes can be used.

FIG. 3B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 3A) of the scalable integrated circuit loop-structure highdensity capacitor 320. As shown in FIG. 3B, capacitor 320 is scalable inthat it can be formed using a selected number of metal layers such as,for example, metal layer 300, and the area of these metal layers can bevaried. Optional shields 321 and/or 323 can be included as the top-mostand/or bottom-most layers of capacitor 320, as well as optional sideshields, to help reduce unwanted parasitic capacitance. Vias 322 coupleone metal layer to another metal layer as illustrated, for example, inregions 324 and 326 of capacitor 320. In region 324, two vias 322 areshown coupling a metallization pattern 302 of metal layer D to ametallization pattern 304 in metal layer E and a metallization pattern304 in metal layer C. In region 326, two vias 322 are shown coupling ametallization pattern 302 of metal layer C to a metallization pattern304 in metal layer D and a metallization pattern 304 in metal layer B.

FIG. 3C is a schematic diagram depicting a second cross sectional view(B-B) (see FIG. 3A) of the scalable integrated circuit loop-structurehigh density capacitor 320. FIG. 3C further illustrates how vias 322couple one metal layer of capacitor 320 to another metal layer. Inregion 340 of capacitor 320, two vias 322 are shown coupling ametallization pattern 302 of metal layer C to a metallization pattern304 in metal layer D and a metallization pattern 304 in metal layer B.In region 342, two vias 322 are shown coupling a metallization pattern302 of metal layer D to a metallization pattern 304 in metal layer E anda metallization pattern 304 in metal layer C.

FIG. 3D is a schematic diagram depicting a top view of an example vialayer 360 of the scalable integrated circuit loop-structure high densitycapacitor 320. Via layer 360 includes a plurality of vias 322 used tocouple adjacent metal layers of capacitor 320.

FIG. 4A is a schematic diagram depicting a top view of an example metallayer 400 of a scalable integrated circuit weave-structure high densitycapacitor 420 (see FIG. 4B) according to an embodiment of the presentinvention. As shown in FIG. 4A, metal layer 400 includes a metallizationpattern 402 and a metallization pattern 404. The metallization patterns402 and 404 each have a plurality of finger tracks 406 coupledapproximately perpendicular to backbone tracks 408. The finger tracks406 of metallization patterns 402 and 404 are interlaced as shown inFIG. 4A. Additionally, each finger track 406 has a plurality of spurtracks 410. The spur tracks 410 are coupled to two sides of a fingertrack 406, except for finger tracks at an end of a backbone track 408,as shown in FIG. 4A. The spur tracks 410 are coupled approximatelyperpendicular to a finger track 406 so that spur tracks 410 of adjacentfinger tracks 406 interlace. By approximately perpendicular, it is meantthat the finger tracks 406 and the spur tracks 410 are sufficientlyperpendicular so that they can be interlaced as illustrated in FIG. 4A.

FIG. 4B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 4A) of the scalable integrated circuit weave-structure highdensity capacitor 420. As shown in FIG. 4B, capacitor 420 is scalable inthat it can be formed using a selected number of metal layers such as,for example, metal layer 400, and the area of these metal layers can bevaried. Optional shields 422 and/or 424 can be included as the top-mostand/or bottom-most layers of capacitor 420, as well as optional sideshields, to help reduce unwanted parasitic capacitance. Vias 425 coupleone metal layer to another metal layer.

FIG. 4C is a schematic diagram depicting a cross sectional view (B-B)(see FIG. 4A) of the scalable integrated circuit weave-structure highdensity capacitor 420. FIG. 4C illustrates how vias 425 in a region 430of capacitor 420 couple the spur tracks 410 of finger tracks 406 in onemetal layer to the spur tracks 410 of the finger tracks 406 of othermetal layers. Region 430 also illustrates how portions of capacitor 420associated with a terminal A of capacitor 420 loop around a portion ofcapacitor 420 associated with a terminal B.

FIG. 4D is a schematic diagram depicting a cross sectional view (C-C)(see FIG. 4A) of the scalable integrated circuit weave-structure highdensity capacitor 420. FIG. 4D illustrates how in a region 440 ofcapacitor 420 portions of capacitor 420 associated with terminal B looparound a portion of capacitor 420 associated with terminal A.

FIG. 4E is a schematic diagram depicting a top view of an example vialayer 450 of the scalable integrated circuit weave-structure highdensity capacitor 420. Via layer 450 includes a plurality of vias 425used to couple adjacent metal layers of capacitor 420.

FIG. 5A is a schematic diagram depicting a top view of an example metallayer 500 of a first scalable integrated circuit vertical-structure highdensity capacitor 520 (see FIG. 5B) according to an embodiment of thepresent invention. Metal layer 500 includes a plurality of firstmetallization patterns 502 and a plurality of second metallizationpatterns 504 interspersed or arranged in a checkerboard pattern, asshown in FIG. 5A. The metallization patterns 502 and 504 are depicted asbeing square, but other shapes can be used.

FIG. 5B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 5A) of the first scalable integrated circuitvertical-structure high density capacitor 520. As shown in FIG. 5B,capacitor 520 is scalable in that it can be formed using a selectednumber of metal layers such as, for example, metal layer 500, and thearea of these metal layers can be varied. Optional shields 522 and/or524 can be included as the top-most and/or bottom-most layers ofcapacitor 520, as well as optional side shields, to help reduce unwantedparasitic capacitance. Vias 526 couple one metal layer to another metallayer as illustrated. The portions of capacitor 520 labeled A areassociated with an A terminal of capacitor 520, and the portions labeledB are associated with a B terminal of capacitor 520. Similar labeling isalso used to identify portions of a capacitor associated with the Aand/or B terminals of the capacitor in other figures (see for exampleFIG. 1B and FIG. 10B)

FIG. 5C is a schematic diagram depicting a top view of an example vialayer 540 of the first scalable integrated circuit vertical-structurehigh density capacitor 520. Via layer 540 includes a plurality of vias526 used to couple adjacent metal layers of capacitor 520.

FIG. 6A is a schematic diagram depicting a top view of an example metallayer 600 of a second scalable integrated circuit vertical-structurehigh density capacitor 620 (see FIG. 6B) according to an embodiment ofthe present invention. Metal layer 600 includes a plurality of firstmetallization patterns 602 and a plurality of second metallizationpatterns 604 interspersed or arranged in a checkerboard pattern, similarto that shown in FIG. 5A. The metallization patterns 602 are coupledtogether and to a backbone track 608 by connecting tracks 606, asdepicted in FIG. 6A. The metallization patterns 604 also are coupledtogether and to a backbone track 610 by connecting tracks 606. Themetallization patterns 602 and 604 are shown as being square, but othershapes can be used.

FIG. 6B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 6A) of the second scalable integrated circuitvertical-structure high density capacitor 620. As shown in FIG. 6B,capacitor 620 is scalable in that it can be formed using a selectednumber of metal layers such as, for example, metal layer 600, and thearea of these metal layers can be varied. Optional shields 622 and/or624 can be included as the top-most and/or bottom-most layers ofcapacitor 620, as well as optional side shields, to help reduce unwantedparasitic capacitance. Vias 626 couple one metal layer to another metallayer as illustrated in FIG. 6B. In one embodiment, the metallizationpatterns 602 and 604 are coupled such that vertically alignedmetallization patterns of two adjacent metal layers belong to the sameterminal of capacitor 620. In another embodiment, the metallizationpatterns 602 and 604 are coupled such that vertically alignedmetallization patterns of two adjacent metal layers belong to differentterminals of capacitor 620.

FIG. 6C is a schematic diagram depicting a top view of an example vialayer 640 of the second scalable integrated circuit vertical-structurehigh density capacitor 620. Via layer 640 includes a plurality of vias626 used to couple adjacent metal layers of capacitor 620. As shown, thevias 626 couple both the metallization patterns 602 and 604 as well asthe backbone tracks 608 and 610.

FIG. 7A is a schematic diagram depicting a top view of an example metallayer 700 of a third scalable integrated circuit vertical-structure highdensity capacitor 720 (see FIG. 7B) according to an embodiment of thepresent invention. Metal layer 700 includes a plurality of firstmetallization patterns 702 and a plurality of second metallizationpatterns 704 interspersed or arranged in a checkerboard pattern, similarto that shown in FIG. 5A. The metallization patterns 702 are coupledtogether and to a backbone track 708 by connecting tracks 706, asdepicted in FIG. 7A. The metallization patterns 704 also are coupledtogether and to a backbone track 710 by connecting tracks 706. Themetallization patterns 702 and 704 are shown as being square, but othershapes also can be used.

FIG. 7B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 7A) of the third scalable integrated circuitvertical-structure high density capacitor 720. As shown in FIG. 7B,capacitor 720 is scalable in that it can be formed using a selectednumber of metal layers such as, for example, metal layer 700, and thearea of these metal layers can be varied. Optional shields 722 and/or724 can be included as the top-most and/or bottom-most layers ofcapacitor 720, as well as optional side shields, to help reduce unwantedparasitic capacitance. Vias 726 couple one metal layer to another metallayer as illustrated in FIG. 7B.

FIG. 7C is a schematic diagram depicting a top view of an example vialayer 740 of the third scalable integrated circuit vertical-structurehigh density capacitor 720. Via layer 740 includes a plurality of vias726 used to couple adjacent metal layers of capacitor 720. As shown, thevias 726 couple both the metallization patterns 702 and 704 as well asthe backbone tracks 708 and 710.

FIG. 8A is a schematic diagram depicting a top view of an example metallayer 800 of a first scalable integrated circuit spiral-structure highdensity capacitor 820 (see FIG. 8B) according to an embodiment of thepresent invention. Metal layer 800 includes a first metallizationpattern 802 and a second metallization pattern 804. The metallizationpatterns 802 and 804 are interleaved with one another in a spiralarrangement as depicted in FIG. 8A.

FIG. 8B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 8A) of the first scalable integrated circuit spiral-structurehigh density capacitor 820. As shown in FIG. 8B, capacitor 820 isscalable in that it can be formed using a selected number of metallayers such as, for example, metal layer 800, and the area of thesemetal layers can be varied. Optional shields 822 and/or 824 can beincluded as the top-most and/or bottom-most layers of capacitor 820, aswell as optional side shields, to help reduce unwanted parasiticcapacitance. Vias 826 couple one metal layer to another metal layer asillustrated in FIG. 8B. The portions of capacitor 820 labeled A areassociated with an A terminal of capacitor 820, and the portions labeledB are associated with a B terminal of capacitor 820.

FIG. 8C is a schematic diagram depicting a top view of an example vialayer 840 of the first scalable integrated circuit spiral-structure highdensity capacitor 820. Via layer 840 includes a plurality of vias 826used to couple adjacent metal layers of capacitor 820. The number ofvias shown in FIG. 8C is exemplary, as is the case for the other vialayer figures described herein.

FIG. 9A is a schematic diagram depicting a top view of an example metallayer 900 of a second scalable integrated circuit spiral-structure highdensity capacitor 920 (see FIG. 9B) according to an embodiment of thepresent invention. Metal layer 900 includes a first metallizationpattern 902 and a second metallization pattern 904. The metallizationpatterns 902 and 904 are interleaved with one another in a spiralarrangement as depicted in FIG. 9A. In addition, metal layer 900includes two border tracks 906 and 908 located proximate to two sides ofthe interleaved metallization patterns 902 and 904.

FIG. 9B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 9A) of the second scalable integrated circuit spiral-structurehigh density capacitor 920. As shown in FIG. 9B, capacitor 920 isscalable in that it can be formed using a selected number of metallayers such as, for example, metal layer 900, and the area of thesemetal layers can be varied. Optional shields 922 and/or 924 can beincluded as the top-most and/or bottom-most layers of capacitor 920, aswell as optional side shields, to help reduce unwanted parasiticcapacitance. Vias 926 couple one metal layer to another metal layer asillustrated in FIG. 9B.

FIG. 9C is a schematic diagram depicting a top view of an example metallayer 930 for the second scalable integrated circuit spiral-structurehigh density capacitor 920. Metal layer 930 has a cross bar shape thatcan be used to connect the inner parts of capacitor 920. Metal layer 930also can be used, for example, for the shield 922 or 924. Alternatively,optional shields 922 and 924 can be formed using a solid shape, like aplate.

As shown in FIG. 9C, metal layer 930 includes two metallization patterns932 and 934. Metallization pattern 932 has a plurality of finger tracks936 coupled approximately perpendicular to a backbone track 938.Similarly, metallization pattern 934 has a plurality of finger tracks936 coupled approximately perpendicular to a second backbone track 938.The fingers 936 of metallization patterns 932 and 934 are interlaced asshown in FIG. 9C. The finger tracks 936 increase the capacitance. Themetallization patterns 932 and 934 can be formed using any conductingmetal. In an embodiment, copper or aluminum is used to form themetallization patterns 932 and 934, but the invention is not limited tothese metals.

Presently, in some processes, the minimum wire width of higher metallayers may not be the same as for lower metal layers, which maycomplicate forming a spiral of the same dimensions in each metal layer.In such cases, metal layer 930 can be used for metal layers having arelatively large minimum width. In general, scalable high densitycapacitors according to the present invention can be formed usingcombinations of the structures described herein. For example, thestructure of capacitor 920 resembles a combination of the structures ofcapacitors 150 and 820.

FIG. 9D is a schematic diagram depicting a top view of an example vialayer 940 of the second scalable integrated circuit spiral-structurehigh density capacitor 920. Via layer 940 includes a plurality of vias926 used to couple adjacent metal layers of capacitor 920. The vias 926couple both the metallization patterns 932 and 934 and the border tracks908.

FIG. 10A is a schematic diagram depicting a top view of a first examplemetal layer 1000 of a third scalable integrated circuit spiral-structurehigh density capacitor 1020 (see FIG. 10B) according to an embodiment ofthe present invention. Metal layer 1000 includes a first metallizationpattern 1002 and a second metallization pattern 1004. The metallizationpatterns 1002 and 1004 are interleaved with one another in a spiralarrangement as depicted in FIG. 10A. In region 1006 of capacitor 1020, aend of metallization pattern 1002 optionally wraps around an end ofmetallization pattern 1004, as shown in FIG. 10A.

FIG. 10B is a schematic diagram depicting a cross sectional view (A-A)(see FIG. 10A) of the third scalable integrated circuit spiral-structurehigh density capacitor 1020. As shown in FIG. 10B, capacitor 1020 isscalable in that it can be formed using a selected number of metallayers such as, for example, metal layer 1000, and the area of thesemetal layers can be varied. Optional shields 1022 and/or 1024 can beincluded as the top-most and/or bottom-most layers of capacitor 1020, aswell as optional side shields, to help reduce unwanted parasiticcapacitance.

FIG. 10C is a schematic diagram depicting a top view of a second examplemetal layer 1030 for the third scalable integrated circuitspiral-structure high density capacitor 1020. Metal layer 1030 includesa first metallization pattern 1032 and a second metallization pattern1034. The metallization patterns 1032 and 1034 are interleaved with oneanother in a spiral arrangement as depicted in FIG. 10C. In region 1036of capacitor 1020, note that the end of metallization pattern 1032 doesnot wrap around the end of metallization pattern 1034, as is shown inregion 1006 (see FIG. 10A). Note also the similarities and differencespresent in the center of the spiral of metal layers 1000 and 1030. Thesedifferences between the metal layers enable, for example, every othermetal layer (e.g., metal layers B, D, and F) to be connected to a firstterminal (e.g., A) of capacitor 1020, and the remaining metal layers(e.g., C and E) to be connected to a second terminal (e.g., B) ofcapacitor 1020. Structures other than that shown, however, can be usedto achieve this interconnection.

FIG. 10D is a schematic diagram depicting a top view of a first portion1040 of an example via layer of the third scalable integrated circuitspiral-structure high density capacitor 1020. The example via layer isused to couple metal layer 1000 to metal layer 1030. As shown in FIG.10D, a first via 1042 couples an end of metallization pattern 1002 to anend of metallization pattern 1032. A second via 1042 couples an end ofmetallization pattern 1004 to an end of metallization pattern 1034.

FIG. 10E is a schematic diagram depicting a top view of a second portion1050 of the example via layer used to couple metal layer 1000 to metallayer 1030. As shown in FIG. 10E, a via 1042 couples a second end ofmetallization pattern 1002 to a second end of metallization pattern1032. A via 1042 also couples a second end of metallization pattern 1004to a second end of metallization pattern 1034. In embodiments, vias inaddition to these four vias are used to couple a metal layer 1000 to ametal layer 1030.

While various embodiments of the present invention have been describedabove, it should be understood that they have been presented by way ofexample only, and not limitation. It will be apparent to persons skilledin the relevant art that various changes in form and detail can be madetherein without departing from the spirit and scope of the invention.Thus, the breadth and scope of the present invention should not belimited by any of the above-described exemplary embodiments, but shouldbe defined only in accordance with the following claims and theirequivalents.

1. A scalable integrated circuit capacitor, comprising: a first metallayer and a second metal layer each including a first metallizationpattern and a plurality of second metallization patterns, said firstmetallization pattern having a plurality of loop openings wherein eachloop opening encompasses one of said plurality of second metallizationpatterns; and a first via layer including a plurality of vias thatcouple said first metallization pattern of said first metal layer tosaid plurality of second metallization patterns of said second metallayer and said plurality of second metallization patterns of said firstmetal layer to said first metallization pattern of said second metallayer.
 2. The capacitor of claim 1, further comprising: a shieldproximate to said first metal layer that reduces unwanted parasiticcapacitance.
 3. The capacitor of claim 2, wherein said shield is coupledto said first metallization pattern of said first metal layer.
 4. Ascalable integrated circuit capacitor, comprising: a first metal layerand a second metal layer each including a first metallization patternand a second metallization pattern, said first metallization pattern andsaid second metallization pattern each having a backbone track and aplurality of finger tracks approximately perpendicular to a backbonetrack, each of said plurality of finger tracks having a plurality ofspur tracks, wherein said plurality of finger tracks of said firstmetallization pattern are interlaced with said plurality of fingertracks of said second metallization pattern and said plurality of spurtracks of said first metallization pattern are interlaced with saidplurality of spur tracks of said second metallization pattern; and afirst via layer including a plurality of vias that couple said firstmetallization pattern of said first metal layer to said secondmetallization pattern of said second metal layer and said secondmetallization pattern of said first metal layer to said firstmetallization pattern of said second metal layer.
 5. The capacitor ofclaim 4, wherein said plurality of vias couple said plurality of spurtracks of said first metallization pattern of said first metal layer tosaid plurality of spur tracks of said first metallization pattern ofsaid second metal layer and said plurality of spur tracks of said secondmetallization pattern of said first metal layer to said plurality ofspur tracks of said second metallization pattern of said second metallayer.
 6. The capacitor of claim 4, further comprising: a shieldproximate to said first metal layer that reduces unwanted parasiticcapacitance.
 7. The capacitor of claim 6, wherein said shield is coupledto said first metallization pattern of said first metal layer.
 8. Ascalable integrated circuit capacitor, comprising: a first metal layerand a second metal layer each including a plurality of firstmetallization patterns and a plurality of second metallization patterns,wherein said plurality of first metallization patterns and saidplurality of second metallization patterns are interspersed with oneanother ma checkerboard arrangement in said first metal layer; and afirst via layer including a plurality of vias that couple said pluralityof first metallization patterns of said first metal layer to saidplurality of first metallization patterns of said second metal layer andsaid plurality of second metallization patterns of said first metallayer to said plurality of second metallization patterns of said secondmetal layer.
 9. The capacitor of claim 8, wherein a majority of each ofsaid plurality of first metallization patterns of each metal layer arecoupled to two other first metallization patterns in the same metallayer by connecting tracks, and a majority of each of said plurality ofsecond metallization patterns of each metal layer are coupled to twoother second metallization patterns in the same metal layer byconnecting tracks.
 10. The capacitor of claim 9, wherein each metallayer further comprises: a first backbone track that couples togethereach of said plurality of first metallization patterns; and a secondbackbone track that couples together each of said plurality of secondmetallization patterns.
 11. The capacitor of claim 8, furthercomprising: a shield proximate to said first metal layer that reducesunwanted parasitic capacitance.
 12. The capacitor of claim 11, whereinsaid shield is coupled to each of said plurality of first metallizationpatterns of said first metal layer.
 13. A scalable integrated circuitcapacitor, comprising: a first metal layer and a second metal layer eachincluding a first metallization pattern and a second metallizationpattern, wherein said first metallization pattern and said secondmetallization pattern are interleaved with one another in a spiralarrangement of more than 180 degrees; and a first via layer including aplurality of vias that couple said first metallization pattern of saidfirst metal layer to said first metallization pattern of said secondmetal layer and said second metallization pattern of said first metallayer to said second metallization pattern of said second metal layer.14. The capacitor of claim 13, further comprising: a shield proximate tosaid first metal layer that reduces unwanted parasitic capacitance. 15.The capacitor of claim 14, wherein said shield is coupled to said firstmetallization pattern of said first metal layer.
 16. A scalableintegrated circuit capacitor, comprising: a first metal layer and asecond metal layer each including a first metallization pattern and asecond metallization pattern, wherein said first metallization patternand said second metallization pattern are interleaved with one anotherin a spiral arrangement of more than 180 degrees; and a first via layerincluding a plurality of vias that couple a first end of said firstmetallization pattern of said first metal layer to a first end of saidsecond metallization pattern of said second metal layer and a first endof said second metallization pattern of said first metal layer to afirst end of said first metallization pattern of said second metallayer.
 17. The capacitor of claim 16, wherein said first via layerfurther comprises: vias that couple a second end of said firstmetallization pattern of said first metal layer to a second end of saidsecond metallization pattern of said second metal layer and a second endof said second metallization pattern of said first metal layer to asecond end of said first metallization pattern of said second metallayer.
 18. The capacitor of claim 17, further comprising: a shieldproximate to said first metal layer that reduces unwanted parasiticcapacitance.
 19. The capacitor of claim 18, wherein said shield iscoupled to said first metallization pattern of said first metal layer.